Chalcogenides

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The phase change random-access memory (PCRAM) device is the next-generation non-volatile memory device in the spotlight, especially for storage class memory applications. Among phase change materials, Ge-Sb-Te (GST) compounds have been widely studied because of their rapid switching between amosphous and crystalline phase.

 

As scaling down to sub-20 nm technology, one of the most important requirements for GST film is the gapfilling into the nanostructure to form confined structures. Atomic layer deposition (ALD) is an ideal solution to fulfil this requirement. ALD GST films were deposited by supercycles of ALD Ge-Te and ALD Sb-Te.

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1. [GeCl2, Sb(SiEt3)3, SbCl3, tBu2Te] Y. Kim, K. Kim, O. Kim, C. Y. Park, D. G. Koo, D.-H. Ahn, B. J. Kuh, W.-J. Lee, Composition control of conformal crystalline GeSbTe films by atomic layer deposition supercycles and tellurization annealing, J. Mater. Chem. C, 10, (2022) 9691. DOI: 10.1039/d2tc00784c

2. Y. Kim, B. Han, Y.-J. Kim, S. Kim, R. Hidayat, J.-M. Park, W. Koh and W.-J. Lee, “Atomic layer deposition and tellurization of Ge–Sb film for phase-change memory applications,” RSC Adv., 9. (2019) 17291