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Materials studied by ALE 

#Al2O3

  • [TMA, F radical] Y. Kim, O. Kim, G. Cho, H.-L. Kim, M. Kim, B. Cho, S. Park, J. Jung, W.-J. Lee, Surface reaction during thermal atomic layer etching of aluminum oxide films using fluorine radicals and trimethylaluminum, Appl. Surf. Sci. 641 (2023) 158453. https://doi.org/10.1016/j.apsusc.2023.158453​

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#SiO2​

  • [HF, NH4F] R. Hidayat, K. Khumaini, H.-L. Kim, T. Chowdhury, T.R. Mayangsari, S. Cho, B. Cho, S. Park, J. Jung, W.-J. Lee, Gas-phase etching mechanism of silicon oxide by a mixture of hydrogen fluoride and ammonium fluoride: A density functional theory study, J. Vac. Sci. Technol. A 41 (2023) 032604. https://doi.org/10.1116/6.0002433

  • [HF] R. Hidayat, H.-L. Kim, K. Khumaini, T. Chowdhury, T. R. Mayangsari, B. Cho, S. Park, W.-J. Lee, Selective etching mechanism of silicon oxide against silicon by hydrogen fluoride: a density functional theory study, PCCP 25 (2023) 3890-3899, DOI: 10.1039/D2CP05456F​​

​#SiN

  • [HF] K. Khumaini, Y. Kim, R. Hidayat, T. Chowdhury, H.-L. Kim, B. Cho, S. Park, W.-J. Lee, Etching mechanism of amorphous hydrogenated silicon nitride by hydrogen fluoride, Appl. Surf. Sci. 654 (2024) 159414. https://doi.org/10.1016/j.apsusc.2024.159414

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