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The research group

focuses on atomic layer deposition (ALD) technology for semiconductor applications (SiO2, SiN, metals, high-K oxides, and GeSbTe). We study the reaction mechanism of the ALD processes through computational studies and in situ characterization.

What's new

Jun, 2020

Best Paper in Session A (Interconnect & Package)

1/1

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Recent Publications
  • T.R. Mayangsari, L.L. Yusup, R. Hidayat, T. Chowdhury, Y.-K. Kwon, and W.-J. Lee, "Reactivity of different nitriding agents with chlorine-terminated surface during atomic layer deposition of silicon nitride," Appl. Surf. Sci. (2021), https://doi.org/10.1016/j.apsusc.2020.147727.

  • Y. Kim, B. Han, J. Shin, S. Kim, R. Hidayat, J.-M. Park, W. Koh, W.-J. Lee, "Atomic layer deposition and tellurization of Ge–Sb film for phase-change memory applications", RSC Adv. (2019) https://doi.org/10.1039/C9RA02188D

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