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Publications

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  1. K. Khumaini, R. Hidayat, T.R. Mayangsari, T. Chowdhury, H.-L. Kim, S.-I. Lee, W.-J. Lee, Density Functional Theory Study on the Selective Capping of Cobalt on Copper Interconnect, Applied Surface Science 585 (2022) 152750. https://doi.org/10.1016/j.apsusc.2022.152750

  2. J.-H. Lee, R. Hidaya, R. Ramesh, H. Roh, D.K. Nandi, W.-J Lee, S.-H. Kim, Preparation of tungsten-based thin films using a F-free W precursor and tert-butyl hydrazine via 2- and 3-step atomic layer deposition process, Applied Surface Science 578 (2022) 15262. https://doi.org/10.1016/j.apsusc.2021.152062

  3. H. Roh, H.-L. Kim, K. Khumaini, H. Son, D. Shin, W.-J. Lee, Effect of Deposition Temperature and Surface Reactions in Atomic Layer Deposition of Silicon Oxide Using Bis(diethylamino)silane and Ozone, Applied Surface Science 571 (2022) 151231. https://doi.org/10.1016/j.apsusc.2021.151231

  4. M. Lee, R. Hidayat, D. K. Nandi, T. H. Kim, Y. Kim, S. Kim, W.-J. Lee, S.-H. Kim, Atomic layer deposition of tungsten and tungsten-based compounds using WCl5 and various reactants selected by density functional theory, Applied Surface Science 563 (2021) 150373. https://doi.org/10.1016/j.apsusc.2021.150373

  5. T. Chowdhury, R. Hidayat, H.-L. Kim, T. R. Mayangsari, S. Cho, S. Park, J. Jung, W.-J. Lee, Density Functional Theory Study on the Modification of Silicon Nitride Surface by Fluorine-Containing Molecules, Applied Surface Science 554 (2021) 149481. https://doi.org/10.1016/j.apsusc.2021.149481

  6. J. Jung, B. Son, B. Kam, Y.S. Joh, W. Jeong, S. Cho, W.-J. Lee, S. Park, Process Steps for High Quality Si-based Epitaxial Growth at Low Temperature via RPCVD, Materials 14(13) (2021) 3733. https://doi.org/10.3390/ma14133733

  7. R. Hidayat, H.-L. Kim, H. Kim, Y. Byun, J. Lee, W.-J. Lee, Surface reaction of the hafnium precursor with a linked amido-cyclopentadienyl ligand: A density functional theory study, Journal of Vacuum Science and Technology A 39 (2021) 32410. https://doi.org/10.1116/6.0000796

  8. R. Hidayat, T. Chowdhury, Y. Kim, S. Kim, T.R. Mayangsari, S.-H. Kim, W.-J. Lee, Density functional theory study on the reducing agents for atomic layer deposition of tungsten using tungsten chloride precursor, Applied Surface Science 538 (2021) 148156. https://doi.org/10.1016/j.apsusc.2020.148156

  9. T.R. Mayangsari, L.L. Yusup, R. Hidayat, T. Chowdhury, Y.-K. Kwon, W.-J. Lee, Reactivity of different nitriding agents with chlorine-terminated surface during atomic layer deposition of silicon nitride, Appl. Surf. Sci. 535 (2021) 147727. https://doi.org/10.1016/j.apsusc.2020.147727

  10. C.-H. Kim, J.-M Kim, S.-H. Seo, J.-H. Lee, J.-Y. Song, W.-J. Lee, Mechanical analysis of a flexible microelectronic system under twisting stress, Journal of Vacuum Science & Technology B 38 (2020) 063207. https://doi.org/10.1116/6.0000665

  11. E. Yu, B. Son, B. Kam, Y.S. Joh, S. Park, W.J. Lee, J. Jung, S. Cho, Si-core/SiGe-shell channel nanowire FET for sub-10-nm logic technology in the THz regime, ETRI J. 41 (2019) 829–837. doi:10.4218/etrij.2018-0281.

  12. Y. Kim, B. Han, Y.-J. Kim, J. Shin, S. Kim, R. Hidayat, J.-M. Park, W. Koh, W.-J. Lee, Atomic layer deposition and tellurization of Ge–Sb film for phase-change memory applications, RSC Adv. 9 (2019) 17291–17298. doi:10.1039/C9RA02188D.

  13. B. Han, Y. Kim, Y.-J. Kim, M.-H. Cho, S.-K. Rha, W.-J. Lee, Preparation of Ge-Sb-Te Thin Films by Tellurization of Ge-Sb Thin Film for Phase-Change Random-Access Memory Application, ECS J. Solid State Sci. Technol. 8 (2019) 298–302. doi:10.1149/2.0211904jss.

  14. T. Chowdhury, R. Hidayat, T.R. Mayangsari, J. Gu, H.-L. Kim, J. Jung, W.-J. Lee, Density functional theory study on the fluorination reactions of silicon and silicon dioxide surfaces using different fluorine-containing molecules, J. Vac. Sci. Technol. A. 37 (2019) 021001. doi:10.1116/1.5081490.

  15. J.-M. Park, S.J. Jang, S.-I. Lee, W.-J. Lee, Novel Cyclosilazane-Type Silicon Precursor and Two-Step Plasma for Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride, ACS Appl. Mater. Interfaces 10 (2018) 9155–9163. doi:10.1021/acsami.7b19741.

  16. T.R. Mayangsari, J.M. Park, L.L. Yusup, J. Gu, J.H. Yoo, H. D. Kim, W.-J. Lee, Catalyzed Atomic Layer Deposition of Silicon Oxide at Ultralow Temperature Using Alkylamine, Langmuir. 34 (2018) 6660–6669. doi:10.1021/acs.langmuir.8b00147.

  17. E. Yu, W.-J. Lee, J. Jung, S. Cho, Ultrathin SiGe Shell Channel p-Type FinFET on Bulk Si for Sub-10-nm Technology Nodes, IEEE Trans. Electron Devices. 65 (2018) 1290–1297. doi:10.1109/TED.2018.2808764.

  18. E. Yu, W.-J. Lee, J. Jung, S. Cho, SiGe Heterojunction FinFET Towards Tera-Hertz Applications, J. Korean Phys. Soc. 72 (2018) 527–532. doi:10.3938/jkps.72.527.

  19. L.L. Yusup, J.-M. Park, T.R. Mayangsari, Y.-K. Kwon, W.-J. Lee, Surface reaction of silicon chlorides during atomic layer deposition of silicon nitride, Appl. Surf. Sci. 432 Part B (2018) 127-131. doi:10.1016/j.apsusc.2017.06.060.

  20. J. Park, S. Kim, J. Hwang, W.S. Han, W. Koh, W. Lee, Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel, J. Vac. Sci. Technol. A 36 (2018) 01A119. doi:10.1116/1.5003388.

  21. T.R. Mayangsari, L.L. Yusup, J.M. Park, E. Blanquet, M. Pons, J. Jung, W.-J. Lee, Study of surface reaction during selective epitaxy growth of silicon by thermodynamic analysis and density functional theory calculation, J. Cryst. Growth. 468 (2017) 278–282. doi:10.1016/j.jcrysgro.2017.01.006.

  22. B. Han, Y.-J. Kim, J.-M. Park, L.L. Yusup, J. Shin, W.-J. Lee, Reaction Mechanism for Atomic Layer Deposition of Germanium Ditelluride Thin Films, J. Nanosci. Nanotechnol. 17 (2017) 3472–3476. doi:10.1166/jnn.2017.14044.

  23. L. L. Yusup, J.-M. Park, Y.-H. Noh, S.-J. Kim, W.-J. Lee, S. Park, and Y.-K. Kwon, “Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride,” RSC Adv. 6(72) (2016) 68515–68524.

  24. J.-M. Park, S. J. Jang, L. L. Yusup, W.-J. Lee, and S.-I. Lee, “Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor,” ACS Appl. Mater. Interfaces 8(32) (2016) 0865–20871. https://doi.org/10.1021/acsami.6b06175

  25. J. Park, H. An, D. Choi, S. Hussain, W. Song, K.-S. An, W.-J. Lee, N. Lee, W.-G. Lee, and J. Jung, “Selective Growth of Graphene in Layer-by-Layer via Chemical Vapor Deposition,” Nanoscale, vol. 8, pp. 14633–14642, 2016.

  26. J.-S. Hwang, S.-H. Seo, and W.-J. Lee, “Effect of Design Parameters on Thermomechanical Stress in Silicon of Through-Silicon Via,” J. Electron. Packag., vol. 138, no. 3, p. 031006, 2016.

  27. S.-H. Seo, J.-H. Lee, J.-Y. Song, W.-J. Lee, “Control of Position of Neutral Line in Flexible Microelectronic System Under Bending Stress,” J. Microelectron. Packag. Soc., vol. 23, no. 2, pp. 1–6, 2016. https://doi.org/10.6117/kmeps.2016.23.2.079

  28. B. Han, Y.-J. Kim, J.-M. Park, L. L. Yusup, H. Ishii, C. Lansalot-Matras, and W.-J. Lee, “Reaction Mechanism Underlying Atomic Layer Deposition of Antimony Telluride Thin Films,” J. Nanosci. Nanotechnol., vol. 16, no. 5, pp. 4924–4928, 2016.

  29. B. Han, J.-M. Park, K. H. Choi, W.-K. Lim, T. R. Mayangsari, W. Koh, and W.-J. Lee, “Atomic layer deposition of stoichiometric Co3O4 films using bis(1,4-di-iso-propyl-1,4-diazabutadiene) cobalt,” Thin Solid Films, vol. 589, pp. 718–722, 2015.

  30. E. Kim, S. Kim, J. Park, S. Hussain, S. Chun, J. Kim, K. An, W. Lee, W. Lee, and J. Jung, “Graphene film growth on sputtered thin Cu–Ni alloy film by inductively coupled plasma chemical vapor deposition”, RSC Adv., vol. 4, pp. 63349–63353, 2014.

  31. J. Park, K. Jin, B. Han, M. J. Kim, J. Jung, J. J. Kim, and W. Lee, “Atomic layer deposition of copper nitride film and its application to copper seed layer for electrodeposition,” Thin Solid Films, vol. 556, pp. 434–439, 2014.

  32. B. Han, K. H. Choi, J.-M. Park, J. W. Park, J. Jung, and W.-J. Lee, “Atomic layer deposition of cobalt oxide thin films using cyclopentadienylcobalt dicarbonyl and ozone at low temperatures,” J. Vac. Sci. Technol. A Vacuum, Surfaces, Film., vol. 31, p. 01A145, 2013.

  33. M. Kim, H. An, W. J. Lee, and J. Jung, “Low Damage-Transfer of Graphene Using Epoxy Bonding”, Electronic Materials Letters, Vol. 9, no. 4, pp. 517-521, 2013.

  34. H. Kim, E. Kim, W. J. Lee, J. Jung, “Effects of Hydrogen in the Cooling Step of Chemical Vapor Deposition of Graphene”, Electronic Materials Letters, Vol. 9, no. 4, pp. 417-420, 2013.

  35. S. H. Seo, J. S. Hwang, J. M. Yang, W. J. Hwang, J. Y. Song, and W. J. Lee, “Failure mechanism of copper through-silicon vias under biased thermal stress,” Thin Solid Films, vol. 546, pp. 14–17, 2013.

  36. B. Han, K. H. Choi, K. Park, W. S. Han, and W.-J. Lee, “Low-Temperature Atomic Layer Deposition of Cobalt Oxide Thin Films Using Dicobalt Hexacarbonyl tert-Butylacetylene and Ozone,” Electrochem. Solid-State Lett., vol. 15, no. 2, p. D14, 2012.

  37. B. Han, S. W. Lee, K. Park, C. O. Park, S. K. Rha, and W. J. Lee, “The electrical properties of dielectric stacks of SiO2 and Al2O3 prepared by atomic layer deposition method,” Curr. Appl. Phys., vol. 12, no. 2, pp. 434–436, 2012.

  38. J.-K. Kim, K. Jin, J. Jung, S.-K. Rha, and W.-J. Lee, “Atomic Layer Deposition of SiO2 Thin Films Using Tetrakis(ethylamino)silane and Ozone,” J. Nanosci. Nanotechnol., vol. 12, no. 4, pp. 3589–3592, 2012.

  39. H. J. Lee, E. Kim, W. J. Lee, and J. Jung, “RF transmission properties of graphene monolayers with width variation,” Phys. Status Solidi - Rapid Res. Lett., vol. 6, no. 1, pp. 19–21, 2012.

  40. K. M. Park, J. K. Kim, B. Han, W. J. Lee, J. Kim, and H. K. Shin, “Influence of the deposition temperature on the properties of copper thin films prepared by alternating injection of Cu(ethylketoiminate)2 and H2 on a ruthenium substrate,” Microelectron. Eng., vol. 89, pp. 27–30, 2012.

  41. H. An, W. J. Lee, and J. Jung, “Graphene synthesis on Fe foil using thermal CVD,” Curr. Appl. Phys., vol. 11, no. 4, pp. S81–S85, 2011.

  42. Y.-S. Lee, Y.-H. Lee, H.-J. Ju, W.-J. Lee, H. S. Lee, and S.-K. Rha, “Characteristics of SiO2/Si3N4/SiO2 Stacked-Gate Dielectrics Obtained via Atomic-Layer Deposition,” J. Nanosci. Nanotechnol., vol. 11, no. 7, pp. 5795–5799, 2011.

  43. S. G. Kang, B. Han, H. S. Park, S. K. Kang, S. K. Rha, S. J. Lee, M. Schlott, and W. J. Lee, “The effect of Mg concentration and annealing temperature on the adhesion characteristics of Cu(Mg) films on glass substrates,” Surf. Coatings Technol., vol. 205, 2010.

  44. W.-J. Lee, C.-H. Han, J.-K. Park, Y.-S. Lee, and S.-K. Rha, “Atomic Layer Deposition and Properties of Silicon Oxide Thin Films Using Alternating Exposures to SiH2Cl2 and O3,” Jpn. J. Appl. Phys., vol. 49, p. 071504, 2010.

  45. Y.-S. Lee, W.-J. Lee, S.-K. Kang, and S.-K. Rha, “Study of Si3N4/SiO2/Si and SiO2/Si3N4/Si Multilayers by O and N K-Edge X-ray Absorption Spectroscopy,” Jpn. J. Appl. Phys., vol. 49, p. 08JF05, 2010.

  46. K.-M. Kim, W.-J. Lee, S.-W. Lee, Y. J. Lee, Y.-S. Lee, and S.-K. Rha, “Pulsed Inductively-Coupled Plasma Doping of Phosphorus for N+-P Junction Fabrication,” J. Korean Phys. Soc., vol. 54, no. 5, p. 1844, 2009.

  47. Y.-S. Kim, S.-G. Kang, K.-B. Kim, N. S. Lee, W.-J. Lee, and J. H. Yoo, “Influence of Deposition Temperature and Substrate Orientation on the Microstructure of Pr0.7Ca0.3MnO3 Films Grown on Platinum Substrates by Using Pulsed Laser Deposition,” J. Korean Phys. Soc., vol. 54, no. 1, p. 209, 2009.

  48. J. Park, B. Y. Yoon, C. O. Park, W. J. Lee, and C. B. Lee, “Sensing behavior and mechanism of mixed potential NOx sensors using NiO, NiO(+YSZ) and CuO oxide electrodes,” Sensors Actuators, B Chem., vol. 135, pp. 516–523, 2009.

  49. K. Park, W. D. Yun, B. J. Choi, H. D. Kim, W. J. Lee, S. K. Rha, and C. O. Park, “Growth studies and characterization of silicon nitride thin films deposited by alternating exposures to Si2Cl6 and NH3,” Thin Solid Films, vol. 517, pp. 3975–3978, 2009.

  50. S.-K. Rha, T. P. Chou, G. Cao, Y.-S. Lee, and W.-J. Lee, “Characteristics of silicon oxide thin films prepared by sol electrophoretic deposition method using tetraethylorthosilicate as the precursor,” Curr. Appl. Phys., vol. 9, no. 2, pp. 551–555, 2009.

  51. Y. Im, J. H. Lee, Y.-S. Lee, W.-J. Lee, and S.-K. Rha, “Characteristics of Silicon Dioxide Film Deposited by Neutral Beam-Assisted Chemical Vapor Deposition,” Jpn. J. Appl. Phys., vol. 47, no. 12, pp. 8905–8908, 2008.

  52. S.-W. Lee, K. Park, B. Han, S.-H. Son, S.-K. Rha, C.-O. Park, and W.-J. Lee, “Atomic Layer Deposition of Silicon Oxide Thin Films by Alternating Exposures to Si2Cl6 and O3,” Electrochem. Solid-State Lett., vol. 11, p. G23, 2008.

  53. Y. Lee, W. Lee, M. H. Lee, and S. Rha, “Study of Implanted B + and P + Ions into Si ( 100 ) for Ultra Shallow Junction by SIMS,” J. Surf. Anal., vol. 14, no. 4, pp. 420–423, 2008.

  54. S.-K. Rha, Y.-S. Lee, W.-J. Lee, M.-S. Jeon, J.-K. Song, and M. H. Lee, “Behavior of Boron Implanted into n-Si (100) by Low-Energy (<2 keV) Ion Implantation for a Shallow Junction,” J. Korean Phys. Soc., vol. 52, no. 4, pp. 1237–1240, 2008.

  55. H.-L. Kim, Y.-S. Kim, S.-G. Kang, W.-J. Lee, U.-H. Kwon, and J. Han, “Dissolution Behaviors of Calcium Phosphate Films Prepared by Pulsed Laser Deposition Method in Ca-free Hanks Balanced Salt Solution,” Biomater. Res., vol. 11, no. 2, pp. 87–90, 2007.

  56. U. H. Kwon, M. H. Kam, M. Bachle, D. J. Kim, W. J. Lee, H. L. Kim, and J. S. Han, “Effects of Thin Hydroxyapatite Coating on Initial Response of Osteoblast-Like Cells,” Key Eng. Mater., vol. 342–343, pp. 673–676, 2007.

  57. W. Lee, M. Chun, K. Cheong, K. Park, C. O. Park, G. Cao, and S. Rha, “Characteristics of SiO 2 Film Grown by Atomic Layer Deposition as the Gate Insulator of Low-Temperature Polysilicon Thin-Film Transistors,” Solid State Phenom., vol. 126, pp. 247–250, 2007.

  58. S. H. Park, I. Y. Ryu, D. J. Kim, W. J. Lee, J. S. Han, and M. H. Lee, “Influence of Hydrothermal Processing Parameters on Phase Stability of Hydroxyapatite,” Key Eng. Mater., vol. 342–343, pp. 877–880, 2007.

  59. S. H. Park, I. Y. Ryu, W. J. Lee, D. J. Kim, J. S. Han, and M. H. Lee, “Sinterbility and Mechanical Properties of Zirconia Nanoparticles Prepared by Hydrothermal Process,” Solid State Phenom., vol. 124–126, pp. 1293–1296, 2007.

  60. W.-J. Lee, Y.-S. Lee,  K.-S. Cheong, S.-K. Rha, K.-M. Kim, W.-J. Lee, “Remaining Oxide and Low-Energy Ion Implantation of BF2+ for Si (100),” J. Korean Phys. Soc., vol. 50, no. 3, p. 657, 2007.

  61. M. H. Kam, J. S. Han, J. H. Yang, J. B. Lee, D. J. Kim, and W. J. Lee, “Histomorphometric Analysis of Zirconia/Alumina Composite and CP Titanium Treaded Implants in Rabbit Tibia,” Key Eng. Mater., vol. 309–311, pp. 437–440, 2006.

  62. H. Kim, S. Lee, Y. Kim, D. Kim, W. Lee, and J. Han, “Influence of substrate temperature on the growth rate and the composition of calcium phosphate films prepared by using pulsed laser deposition,” J. Korean Phys. Soc., vol. 49, no. 6, pp. 2418–2422, 2006.

  63. H. Kim, Y. Kim, D. Kim, and W. Lee, “Influences of Ambient Gases on the Structure and the Composition of Calcium Phosphate Films Prepared by Pulsed Laser Deposition,” J. Korean Phys. Soc., vol. 49, no. 5, pp. 2019–2022, 2006.

  64. W. J. Lee, U. J. Kim, C. H. Han, M. H. Chun, S. K. Rha, and Y. S. Lee, “Characteristics of silicon nitride thin films prepared by using alternating exposures of SiH2Cl2 and NH3,” J. Korean Phys. Soc., vol. 47, no. November, pp. S598–S602, 2005.

  65. W. Lee, S. Lee, H. Kim, D. Kim, and J. Han, “Characteristics of calcium phosphate films prepared by pulsed laser deposition under various water vapor pressures,” J. Korean Phys. Soc., vol. 47, no. 1, pp. 152–156, 2005.

  66. W. J. Lee, Y. S. Lee, S. K. Rha, K. Y. Lim, H. S. Lee, and C. N. Whang, “Polyimide Surface Modification by Low Energy Ion Beam Irradiation,” Mater. Sci. Forum, vol. 492–493, pp. 659–664, 2005.

  67. J.-H. Lee, U.-J. Kim, C.-H. Han, S.-K. Rha, W.-J. Lee, and C.-O. Park, “Investigation of Silicon Oxide Thin Films Prepared by Atomic Layer Deposition Using SiH2Cl2 and O3 as the precursors,” Jpn. J. Appl. Phys., vol. 43, no. 3, pp. L328–L330, 2004.

  68. W. J. Lee, S. J. Kim, W. Lee, Y. J. Lee, Y. S. Lee, S. K. Rha, and C. O. Park, “Texture and sheet resistance of Al alloy thin films on Ti and TiN thin films,” J. Mater. Sci. Mater. Electron., vol. 15, pp. 9–13, 2004.

  69. W. Lee, J. Lee, C. O. Park, and Y. Lee, “A Comparative Study on the Si Precursors for the Atomic Layer Deposition of Silicon Nitride Thin Films,” Korean J. Mater. Res., vol. 45, no. 5, pp. 1352–1355, 2004.

  70. W.-J. Lee and S.-K. Rha, “Chemical vapor deposition–physical vapor deposition aluminum plug process for dynamic random-access memory applications,” J. Vac. Sci. Technol. B Microelectron. Nanom. Struct., vol. 22, p. 1931, 2004.

  71. W. J. Lee and S. K. Rha, “Effect of underlayer on the via filling and the microstructure of the aluminum film in aluminum plug process,” Japanese J. Appl. Physics, Part 1 Regul. Pap. Short Notes Rev. Pap., vol. 42, no. 6, pp. 3372–3376, 2003.

  72. Y. Lee, H. M. Lim, S.-J. Kim, W.-J. Lee, and D.-H. Cho, “Estimation of phase ratio for nano-sized TiO<SUB>2</SUB> powders by Ti K-edge XANES,” Res. Chem. Intermed., vol. 29, no. 7, pp. 783–791, 2003.

  73. W. J. Lee, Y. S. Lee, S. K. Rha, Y. J. Lee, K. Y. Lim, Y. D. Chung, and C. N. Whang, “Adhesion and interface chemical reactions of Cu/polyimide and Cu/TiN by XPS,” Appl. Surf. Sci., vol. 205, pp. 128–136, 2003.

  74. J. J. Kim, J. Y. Kim, C. H. Jeong, N. H. Park, S. B. Han, J. W. Park, and W.-J. Lee, “Corrosion in Aluminum Chemical Mechanical Planarization for Sub-Quarter-Micron Dynamic Random Access Memory Devices,” Jpn. J. Appl. Phys., vol. 41, no. 2, pp. 925–929, 2002.

  75. Joo Wan Lee, Byoung Youp Kim, Sang Yeop Han, W. J. Lee, Jun Ki Kim, J. W. Park, Jae Sung Roh, and Y. C. Kim, “Study of bump formation in integrated chemical vapor deposition-physical vapor deposition aluminum filling process,” Japanese J. Appl. Physics, Part 1 Regul. Pap. Short Notes Rev. Pap., vol. 40, no. 3, pp. 1172–1177, 2001.

  76. S.-J. Kim, W. Lee, W.-J. Lee, S. D. Park, J. S. Song, and E. G. Lee, “Preparation of nanocrystalline nickel oxide–yttria-stabilized zirconia composite powder by solution combustion with ignition of glycine fuel,” J. Mater. Res., vol. 16, pp. 3621–3627, 2001.

  77. W. H. Lee, S. J. Kim, W. J. Lee, J. G. Lee, R. C. Haddon, and P. J. Reucroft, “X-ray photoelectron spectroscopic studies of surface modified single-walled carbon nanotube material,” Appl. Surf. Sci., vol. 181, pp. 121–127, 2001.

  78. W. H. Lee, S. J. Kim, W. J. Lee, C. S. Byun, D. K. Kim, J. Y. Kim, C. Y. Hyun, J. G. Lee, and J. W. Park, “Mechanism of surface modification of a porous-coated Ti-6Al-4V implant fabricated by electrical resistance sintering,” J. Mater. Sci., vol. 36, pp. 3573–3577, 2001.

  79. W.-J. L. W.-J. Lee, J. J. K. J. J. Kim, S. J. L. S. J. Lee, J. W. P. J. W. Park, and H. L. P. H. L. Park, “CVD-PVD aluminum process for DRAM applications,” Proc. IEEE 2001 Int. Interconnect Technol. Conf. (Cat. No.01EX461), vol. 00, no. 7, pp. 4–6, 2001.

  80. B.-S. Suh, H.-K. Cho, Y.-J. Lee, W.-J. Lee, and C.-O. Park, “Crystallization of amorphous WN[sub x] films,” J. Appl. Phys., vol. 89, no. 7, p. 4128, 2001.

  81. W. J. Lee, J. Hong, and S. K. Rha, “Thermally stable tungsten bit-line process flow for the capacitor over bit-line-type dynamic random-access memory,” Japanese J. Appl. Physics, Part 1 Regul. Pap. Short Notes Rev. Pap., vol. 39, no. 6, pp. 3344–3348, 2000.

  82. W.-J. Lee, B. Y. Kim, S. Y. Han, J. W. Lee, J. K. Kim, and P. J. Won, “Integration of Chemical Vapor Deposition Aluminum and Physical Vapor Deposition Aluminum for Aluminum Plug Process of Sub-Quarter Micron Devices,” Jpn. J. Appl. Phys., vol. 39, no. 4, pp. 1694–1700, 2000.

  83. S.-K. Rha, S.-Y. Lee, W.-J. Lee, Y.-S. Hwang, C.-O. Park, D.-W. Kim, Y.-S. Lee, and C.-N. Whang, “Characterization of TiN barriers against Cu diffusion by capacitance–voltage measurement,” J Vac Sci Technol  B, vol. 16, no. 4, p. 2019, 1998.

  84. S.-K. Rha, W.-J. Lee, S.-Y. Lee, Y.-S. Hwang, Y.-J. Lee, D.-I. Kim, D.-W. Kim, S.-S. Chun, and C.-O. Park, “Improved TiN film as a diffusion barrier between copper and silicon,” Thin Solid Films, vol. 320, no. 1, pp. 134–140, 1998.

  85. W.-J. Lee, S.-K. Rha, S.-Y. Lee, D.-W. Kim, and C.-O. Park, “Effect of the pressure on the chemical vapor deposition of copper from copper hexafluoroacetylacetonate trimethylvinylsilane,” Thin Solid Films, vol. 305, pp. 254–258, 1997.

  86. S.-K. Rha, W.-J. Lee, S.-Y. Lee, D.-W. Kim, and C.-O. Park, “Grain growth of copper films prepared by chemical vapour deposition,” J. Mater. Sci. Electron., vol. 8, pp. 217–221, 1997.

  87. W.-J. Lee, S.-K. Rha, S.-Y. Lee, and C.-O. Park, “Field-aided thermal chemical vapor deposition of copper using Cu(I) organometallic precursor,” J. Electrochem. Soc., vol. 144, no. 2, pp. 683–686, 1997.

  88. S. Rha, W. Lee, S. Lee, D. Kim, C.-O. Park, and S.-S. Chun, “Interdiffusions and reactions in Cu/TiN/Ti/Si and Cu/TiN/Ti/SiO2/Si multilayer structures,” J. Mater. Res., vol. 12, no. 12, pp. 3367–3372, 1997.

  89. D. W. Kim, K. J. Kim, D. I. Kim, W. J. Lee, S. Y. Lee, Y. J. Lee, S. K. Rha, and C. O. Park, “Effects of the integrity of silicon thin films on the electrical characteristics of thin dielectric ONO film,” J. Mater. Sci. Electron., vol. 8, pp. 91–94, 1997.

  90. S.-Y. Lee, S.-K. Rha, W.-J. Lee, D.-W. Kim, J.-S. Hwang, and C.-O. Park, “Effects of the partial pressure of copper (I) hexafluoroacetylacetonate trimethylvinylsilane on the chemical vapor deposition of copper,” Japanese J. Appl. Physics, Part 1 Regul. Pap. Short Notes Rev. Pap., vol. 36, no. 8, pp. 5249–5252, 1997.

  91. W.-J. Lee, J.-S. Min, S.-K. Rha, S.-S. Chun, C.-O. Park, and D.-W. Kim, “Copper chemical vapour deposition using copper(I) hexafluoroacetylacetonate trimethylvinylsilane,” J. Mater. Sci. Mater. Electron., vol. 7, no. 2, pp. 111–117, 1996.

  92. S.-K. Rha, W.-J. Lee, S.-Y. Lee, D.-W. Kim, C.-O. Park, and S.-S. Chun, “Effects of the annealing in Ar and H2/Ar ambients on the microstructure and the electrical resistivity of the copper film prepared by chemical vapor deposition,” Japanese J. Appl. Physics, Part 1 Regul. Pap. Short Notes Rev. Pap., vol. 35, no. 11, 1996.

Patents

 

International patents

 

  1. Won Jun Lee, "Metal Thin Film of Semiconductor Device and Method for Forming Same,” U. S. Pat. No. 6,780,752 (등록일: 2004년 8월 24일)

  2. Won Jun Lee, "Method for Forming an Interconnection in a Semiconductor Device ", U. S. Pat. No. 6,242,340 (등록일: 2001년 6월 5일)

  3. "用於半導體裝置之互連層的製造方法", 중화민국특허 제124,052호 (등록일: 2001년 4월 23일)

  4. "半導體素子のCu薄膜形成方法", 일본 특허 제 2,932,255호 (등록일 1999. 5. 28.)

  5. "半導體素子の銅薄配線形成方法", 일본 특허 제 2,952,591호 (등록일: 1999. 7. 16.)

  6. "Method of Forming a Thin Film of Copper", U. S. Patent No. 5,817,367 (등록일 1998. 10. 6.)

  7. "2層構造の銅擴散防止膜の形成方法", 일본 특허 제 2,782,600호 (등록일: 1998. 5. 22)

 

 

 

Domestic Patents

 

 

  1. 코발트-함유 박막의 제조 방법, 2016-06 (출원)

  2. 중립축 위치가 조절된 유연전자소자 및 그 제조방법, 2016-05 (출원)

  3. 실리콘 질화막의 증착 방법 및 상기 실리콘 질화막의 증착 장치, 2016-04 (출원)

  4. 원자층 증착을 이용한 칼코겐-함유 막의 제조 방법, 2016-04 (출원)

  5. 척핀, 척핀 제조 방법 및 기판 처리 장치, 2016-01 (출원)

  6. 실리콘 관통전극 구조체 및 이의 열-기계적 응력 예측 방법, 2015-12 (등록)

  7. 칼코겐-함유 막 및 이의 제조 방법, 2015-11 (출원)

  8. 불소코팅물품, 불소코팅물품 제조 방법 및 기판 처리 장치, 2015-11 (출원)

  9. 척핀, 척핀 제조 방법 및 기판 처리 장치, 2015-11 (출원)

  10. 산화금속 박막의 제조 방법 및 상기 박막을 이용하는 리튬이차전지, 2015-01 (출원)

  11. 실리콘 관통전극 구조체 및 이의 열-기계적 응력 예측 방법, 2014-10 (출원)

  12. 칼코겐-함유 막 및 이의 제조 방법, 2014-06 (출원)

  13. 서로 다른 젖음성을 갖는 영역들을 구비하는 캐리어 기판, 이를 사용한 소자 기판 처리 방법, 2014-04 (등록)

  14. 전기도금용 구리 금속 박막 및 그의 제조 방법, 및 이를 이용한 반도체 소자의 구리 배선 형성 방법, 2013-12 (출원)

  15. 이원준,  “박막 전지용 리튬-함유 박막 형성용 타겟 및 이의 제조 방법”, 2014-04 (등록) (특허출원번호 10-2011-0017088, 2011. 02. 25)

  16. 정종완, 이원준, “그래핀 배선 형성 방법”, 특허출원번호 10-2011-0018436, 2011. 03. 02

  17. 이원준, 박진우, 박재민, 김대현,  “박막 증착 장치 및 방법”, 2013-12 (등록) (특허출원번호 10-2012-005123, 2012. 05. 15)

  18. 이원준, 서승호, 이재학, 송준엽, “구리 이온 드리프트의 측정을 위한 구조체 및 이를 이용한 구리 이온 드리프트의 측정 방법”, 대한민국 특허등록번호 10-1229326, 2013. 01. 29(출원번호 제 2011-0029499, 2011. 03. 31)

  19. 이원준 박광철 한별 박광민, “박막 측정 방법 및 박막 측정 장치”, 대한민국 특허등록번호 10-1034584, 2011년 5월 4일, (특허출원번호10-2008-0099539, 2008.10.10.)

  20. 이원준, 한별, “원자층 증착법에 의한 금속 박막 증착 방법”, 대한민국 특허등록번호 10-1013818-0000, 2011년 2월 1일, (특허출원번호 10-2008-0075538, 2008. 8. 1.)

  21. 이원준, 박광철, 손상호, 박재균, 최종문, 나사균, “2단계 증착에 의한 다결정 실리콘 박막의 형성 방법”, 대한민국 특허등록번호 10-0773123 (등록일 2007. 10.29)

  22. 이원준, “다층 절연박막”, 대한민국 특허등록번호 10-0762390, 2007. 9. 20 (특허출원번호 10-2006-0074526, 2006. 8. 8.)

  23. 이원준, 박광철, 손상호, 박재균, 최종문, 나사균, “실리콘 박막의 원자층 증착 방법”, 대한민국 특허등록번호 10-0734393, 2007. 6. 26. (특허출원번호 10-2005-0114400, 2005. 11. 28)

  24. 이원준, 박광철, 손상호, 박재균, 최종문, 나사균, “산화막의 원자층 에칭방법”, 10-0707983, 2007.04.09 (특허출원번호 10-2005-0114405, 2005.11.28.)

  25. 이원준, 김정주, “반도체 장치의 제조방법”, 대한민국특허 제 739,244호 (등록일 2007년 7월 6일)

  26. 이원준, “금속배선 형성 방법”, 대한민국특허 제 727,437호 (등록일 2007년 6월 5일)

  27. 이원준, “다층 금속박막의 제조방법”, 대한민국특허 제 360,296호 (등록일 2006년 3월 6일)

  28. 이원준, 김정주, “반도체소자의 알루미늄 합금 박막 제조 방법”, 대한민국특허 제 399,066호 (등록일 2003년 9월 9일)

  29. 김정주, 이원준, “일렉트로마이그레이션에 대한 테트스패턴” 대한민국특허 제 390,809호 (등록일 2003년 6월 27일)

  30. 이원준, “반도체 소자의 구리 박막 형성 방법” 대한민국특허 제357,183호 (등록일: 2002년 10월 4일)

  31. 이원준, “반도체 소자의 금속박막 및 그 형성 방법” 대한민국특허 제 344,836호 (등록일: 2002년 7월 20일)

  32. 이원준, “반도체 소자의 배선 형성방법” 대한민국특허 제 300,065호 (등록일: 2001년 6월 13일)

  33. 이원준, 박진원, “반도체 장치의 배선 제조 방법” 대한민국특허 제 282,230호 (등록일: 2000년 11월 27일)

  34. 이원준, 박진원, “반도체 장치의 배선 제조 방법” 대한민국특허 제 282,231호 (등록일: 2000년 11월 27일)

  35. 라사균, 이원준, “반도체 소자의 배선형성 방법” 대한민국특허 제 253,382호 (등록일: 2000년 1월 22일)

  36. “바이어스 전압이 인가된 Cu 박막 형성박막”, 대한민국특허 제 179,797호 (등록일: 1998.11.28)

  37. “이층구조의 Cu 확산방지막 형성방법”, 대한민국특허 제 179,795호 (등록일: 1998.11.28)

  38. “확산억제 특성을 갖는 박막형성방법”, 대한민국특허 제 166,857호 (등록일: 1998.09.24)

  39. “반도체 소자의 장벽금속층과 그 형성방법”, 대한민국특허 제 165,821호 (등록일: 1998.09.18)

  40. “반도체 소자의 배선 제조방법”, 대한민국특허 제 167,238호 (등록일: 1998.09.26)

  41. “반도체 소자의 배선 제조방법”, 대한민국특허 제 167,237호 (등록일: 1998.09.26)

  42. “반도체장치의 배선 형성방법”, 대한민국특허 제 161,875호 (등록일: 1998.08.26)

  43. “반도체 소자의 배선 제조방법”, 대한민국특허 제 157,876호 (등록일: 1998.08.01)

  44. “반도체 장치의 배선형성방법”, 대한민국특허 제 140,640호 (등록일: 1998.03.13)

  45. “구리 실리사이드 형성 방법”, 대한민국특허 제 140,639호 (등록일: 1998.03.13)

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