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The latest updates can be found at the Elsevier Pure or ResearchGate site.

 

Publications 

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  1. T. Chowdhury, K. Khumaini, R. Hidayat, H.-L. Kim, W.-J. Lee, Chemisorption of silicon tetrachloride on silicon nitride: a density functional theory study, PCCP 26 (2024) 11597-11603. DOI: 10.1039/D3CP05799B

  2. K. Khumaini, Y. Kim, R. Hidayat, T. Chowdhury, H.-L. Kim, B. Cho, S. Park, W.-J. Lee, Etching mechanism of amorphous hydrogenated silicon nitride by hydrogen fluoride, Appl. Surf. Sci. 654 (2024) 159414. https://doi.org/10.1016/j.apsusc.2024.159414

  3. Y. Kim, O. Kim, G. Cho, H.-L. Kim, M. Kim, B. Cho, S. Park, J. Jung, W.-J. Lee, Surface reaction during thermal atomic layer etching of aluminum oxide films using fluorine radicals and trimethylaluminum, Appl. Surf. Sci. 641 (2023) 158453. https://doi.org/10.1016/j.apsusc.2023.158453

  4. H.-L. Kim, R. Hidayat, K. Khumaini, W.-J. Lee, A theoretical study on the surface reaction of tetrakis(dimethylamino)titanium on titanium oxide, PCCP 25 (2023) 22250-22257. DOI: 10.1039/D3CP02009F

  5. R. Hidayat, K. Khumaini, H.-L. Kim, T. Chowdhury, T.R. Mayangsari, S. Cho, B. Cho, S. Park, J. Jung, W.-J. Lee, Gas-phase etching mechanism of silicon oxide by a mixture of hydrogen fluoride and ammonium fluoride: A density functional theory study, J. Vac. Sci. Technol. A 41 (2023) 032604. https://doi.org/10.1116/6.0002433

  6. K. Khumaini, H. Roh, H. Han, H.-L. Kim, H.-S. Kim, J.-H. Seok, J. W. Park, W.-J. Lee, Surface reaction mechanism of atomic layer deposition of niobium oxide: In situ characterization and first-principle study, Appl. Surf. sci. 615 (2023) 156340. https://doi.org/10.1016/j.apsusc.2023.156340

  7. R. Hidayat, H.-L. Kim, K. Khumaini, T. Chowdhury, T. R. Mayangsari, B. Cho, S. Park, W.-J. Lee, Selective etching mechanism of silicon oxide against silicon by hydrogen fluoride: a density functional theory study, PCCP 25 (2023) 3890-3899, DOI: 10.1039/D2CP05456F

  8. Y. Kim, K. Kim, O. Kim, C. Y. Park, D. G. Koo, D.-H. Ahn, B. J. Kuh, W.-J. Lee, Composition control of conformal crystalline GeSbTe films by atomic layer deposition supercycles and tellurization annealing, J. Mater. Chem. C, 10, (2022) 9691. DOI: 10.1039/d2tc00784c

  9. T.-W. Kim, J.-M. Kim, H.-J. Yun, J.-S. Lee, J.-H. Lee, J.-Y. Song, Y.-C. Joo, W.-J. Lee, B.-J. Kim, Electrical Reliability of Flexible Silicon Package Integrated on Polymer Substrate During Repeated Bending Deformations, J. Electron. Packag. 144(4) (2022) 041017.  https://doi.org/10.1115/1.4054183

  10. S. Kim, R. Hidayat, H. Roh, J. Kim, H.-L. Kim, K. Khumaini, M. Park, J.-H. Seok, J. W. Park, W.-J. Lee, Atomic layer deposition of titanium oxide thin films using a titanium precursor with a linked amido-cyclopentadienyl ligand, J. Mater. Chem. C, 10, (2022) 6696-6709. DOI: 10.1039/D2TC00574C

  11. C.-H. Kim, H. Yun, S.-H. Seo, B.-J. Kim, J.-H. Lee, J.-Y. Song, W.-J. Lee, Finite Element Analysis for Safe Design of a Flexible Microelectronic System under Bending Deformation, ECS J. Solid State Sci. Technol. 11 (2022) 045015 DOI 10.1149/2162-8777/ac67ae

  12. K. Khumaini, R. Hidayat, T.R. Mayangsari, T. Chowdhury, H.-L. Kim, S.-I. Lee, W.-J. Lee, Density Functional Theory Study on the Selective Capping of Cobalt on Copper Interconnect, Appl. Surf. Sci. 585 (2022) 152750. https://doi.org/10.1016/j.apsusc.2022.152750

  13. J.-H. Lee, R. Hidaya, R. Ramesh, H. Roh, D.K. Nandi, W.-J Lee, S.-H. Kim, Preparation of tungsten-based thin films using a F-free W precursor and tert-butyl hydrazine via 2- and 3-step atomic layer deposition process, Applied Surface Science 578 (2022) 15262. https://doi.org/10.1016/j.apsusc.2021.152062

  14. H. Roh, H.-L. Kim, K. Khumaini, H. Son, D. Shin, W.-J. Lee, Effect of Deposition Temperature and Surface Reactions in Atomic Layer Deposition of Silicon Oxide Using Bis(diethylamino)silane and Ozone, Applied Surface Science 571 (2022) 151231. https://doi.org/10.1016/j.apsusc.2021.151231

  15. M. Lee, R. Hidayat, D. K. Nandi, T. H. Kim, Y. Kim, S. Kim, W.-J. Lee, S.-H. Kim, Atomic layer deposition of tungsten and tungsten-based compounds using WCl5 and various reactants selected by density functional theory, Applied Surface Science 563 (2021) 150373. https://doi.org/10.1016/j.apsusc.2021.150373

  16. T. Chowdhury, R. Hidayat, H.-L. Kim, T. R. Mayangsari, S. Cho, S. Park, J. Jung, W.-J. Lee, Density Functional Theory Study on the Modification of Silicon Nitride Surface by Fluorine-Containing Molecules, Applied Surface Science 554 (2021) 149481. https://doi.org/10.1016/j.apsusc.2021.149481

  17. J. Jung, B. Son, B. Kam, Y.S. Joh, W. Jeong, S. Cho, W.-J. Lee, S. Park, Process Steps for High Quality Si-based Epitaxial Growth at Low Temperature via RPCVD, Materials 14(13) (2021) 3733. https://doi.org/10.3390/ma14133733

  18. R. Hidayat, H.-L. Kim, H. Kim, Y. Byun, J. Lee, W.-J. Lee, Surface reaction of the hafnium precursor with a linked amido-cyclopentadienyl ligand: A density functional theory study, Journal of Vacuum Science and Technology A 39 (2021) 32410. https://doi.org/10.1116/6.0000796

  19. R. Hidayat, T. Chowdhury, Y. Kim, S. Kim, T.R. Mayangsari, S.-H. Kim, W.-J. Lee, Density functional theory study on the reducing agents for atomic layer deposition of tungsten using tungsten chloride precursor, Applied Surface Science 538 (2021) 148156. https://doi.org/10.1016/j.apsusc.2020.148156

  20. T.R. Mayangsari, L.L. Yusup, R. Hidayat, T. Chowdhury, Y.-K. Kwon, W.-J. Lee, Reactivity of different nitriding agents with chlorine-terminated surface during atomic layer deposition of silicon nitride, Appl. Surf. Sci. 535 (2021) 147727. https://doi.org/10.1016/j.apsusc.2020.147727

  21. C.-H. Kim, J.-M Kim, S.-H. Seo, J.-H. Lee, J.-Y. Song, W.-J. Lee, Mechanical analysis of a flexible microelectronic system under twisting stress, Journal of Vacuum Science & Technology B 38 (2020) 063207. https://doi.org/10.1116/6.0000665

  22. E. Yu, B. Son, B. Kam, Y.S. Joh, S. Park, W.J. Lee, J. Jung, S. Cho, Si-core/SiGe-shell channel nanowire FET for sub-10-nm logic technology in the THz regime, ETRI J. 41 (2019) 829–837. doi:10.4218/etrij.2018-0281.

  23. Y. Kim, B. Han, Y.-J. Kim, J. Shin, S. Kim, R. Hidayat, J.-M. Park, W. Koh, W.-J. Lee, Atomic layer deposition and tellurization of Ge–Sb film for phase-change memory applications, RSC Adv. 9 (2019) 17291–17298. doi:10.1039/C9RA02188D.

  24. B. Han, Y. Kim, Y.-J. Kim, M.-H. Cho, S.-K. Rha, W.-J. Lee, Preparation of Ge-Sb-Te Thin Films by Tellurization of Ge-Sb Thin Film for Phase-Change Random-Access Memory Application, ECS J. Solid State Sci. Technol. 8 (2019) 298–302. doi:10.1149/2.0211904jss.

  25. T. Chowdhury, R. Hidayat, T.R. Mayangsari, J. Gu, H.-L. Kim, J. Jung, W.-J. Lee, Density functional theory study on the fluorination reactions of silicon and silicon dioxide surfaces using different fluorine-containing molecules, J. Vac. Sci. Technol. A. 37 (2019) 021001. doi:10.1116/1.5081490.

  26. J.-M. Park, S.J. Jang, S.-I. Lee, W.-J. Lee, Novel Cyclosilazane-Type Silicon Precursor and Two-Step Plasma for Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride, ACS Appl. Mater. Interfaces 10 (2018) 9155–9163. doi:10.1021/acsami.7b19741.

  27. T.R. Mayangsari, J.M. Park, L.L. Yusup, J. Gu, J.H. Yoo, H. D. Kim, W.-J. Lee, Catalyzed Atomic Layer Deposition of Silicon Oxide at Ultralow Temperature Using Alkylamine, Langmuir. 34 (2018) 6660–6669. doi:10.1021/acs.langmuir.8b00147.

  28. E. Yu, W.-J. Lee, J. Jung, S. Cho, Ultrathin SiGe Shell Channel p-Type FinFET on Bulk Si for Sub-10-nm Technology Nodes, IEEE Trans. Electron Devices. 65 (2018) 1290–1297. doi:10.1109/TED.2018.2808764.

  29. E. Yu, W.-J. Lee, J. Jung, S. Cho, SiGe Heterojunction FinFET Towards Tera-Hertz Applications, J. Korean Phys. Soc. 72 (2018) 527–532. doi:10.3938/jkps.72.527.

  30. L.L. Yusup, J.-M. Park, T.R. Mayangsari, Y.-K. Kwon, W.-J. Lee, Surface reaction of silicon chlorides during atomic layer deposition of silicon nitride, Appl. Surf. Sci. 432 Part B (2018) 127-131. doi:10.1016/j.apsusc.2017.06.060.

  31. J. Park, S. Kim, J. Hwang, W.S. Han, W. Koh, W. Lee, Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel, J. Vac. Sci. Technol. A 36 (2018) 01A119. doi:10.1116/1.5003388.

  32. T.R. Mayangsari, L.L. Yusup, J.M. Park, E. Blanquet, M. Pons, J. Jung, W.-J. Lee, Study of surface reaction during selective epitaxy growth of silicon by thermodynamic analysis and density functional theory calculation, J. Cryst. Growth. 468 (2017) 278–282. doi:10.1016/j.jcrysgro.2017.01.006.

  33. B. Han, Y.-J. Kim, J.-M. Park, L.L. Yusup, J. Shin, W.-J. Lee, Reaction Mechanism for Atomic Layer Deposition of Germanium Ditelluride Thin Films, J. Nanosci. Nanotechnol. 17 (2017) 3472–3476. doi:10.1166/jnn.2017.14044.

  34. L. L. Yusup, J.-M. Park, Y.-H. Noh, S.-J. Kim, W.-J. Lee, S. Park, and Y.-K. Kwon, “Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride,” RSC Adv. 6(72) (2016) 68515–68524.

  35. J.-M. Park, S. J. Jang, L. L. Yusup, W.-J. Lee, and S.-I. Lee, “Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor,” ACS Appl. Mater. Interfaces 8(32) (2016) 0865–20871. https://doi.org/10.1021/acsami.6b06175

  36. J. Park, H. An, D. Choi, S. Hussain, W. Song, K.-S. An, W.-J. Lee, N. Lee, W.-G. Lee, and J. Jung, “Selective Growth of Graphene in Layer-by-Layer via Chemical Vapor Deposition,” Nanoscale, vol. 8, pp. 14633–14642, 2016.

  37. J.-S. Hwang, S.-H. Seo, and W.-J. Lee, “Effect of Design Parameters on Thermomechanical Stress in Silicon of Through-Silicon Via,” J. Electron. Packag., vol. 138, no. 3, p. 031006, 2016.

  38. S.-H. Seo, J.-H. Lee, J.-Y. Song, W.-J. Lee, “Control of Position of Neutral Line in Flexible Microelectronic System Under Bending Stress,” J. Microelectron. Packag. Soc., vol. 23, no. 2, pp. 1–6, 2016. https://doi.org/10.6117/kmeps.2016.23.2.079

  39. B. Han, Y.-J. Kim, J.-M. Park, L. L. Yusup, H. Ishii, C. Lansalot-Matras, and W.-J. Lee, “Reaction Mechanism Underlying Atomic Layer Deposition of Antimony Telluride Thin Films,” J. Nanosci. Nanotechnol., vol. 16, no. 5, pp. 4924–4928, 2016.

  40. B. Han, J.-M. Park, K. H. Choi, W.-K. Lim, T. R. Mayangsari, W. Koh, and W.-J. Lee, “Atomic layer deposition of stoichiometric Co3O4 films using bis(1,4-di-iso-propyl-1,4-diazabutadiene) cobalt,” Thin Solid Films, vol. 589, pp. 718–722, 2015.

  41. E. Kim, S. Kim, J. Park, S. Hussain, S. Chun, J. Kim, K. An, W. Lee, W. Lee, and J. Jung, “Graphene film growth on sputtered thin Cu–Ni alloy film by inductively coupled plasma chemical vapor deposition”, RSC Adv., vol. 4, pp. 63349–63353, 2014.

  42. J. Park, K. Jin, B. Han, M. J. Kim, J. Jung, J. J. Kim, and W. Lee, “Atomic layer deposition of copper nitride film and its application to copper seed layer for electrodeposition,” Thin Solid Films, vol. 556, pp. 434–439, 2014.

  43. B. Han, K. H. Choi, J.-M. Park, J. W. Park, J. Jung, and W.-J. Lee, “Atomic layer deposition of cobalt oxide thin films using cyclopentadienylcobalt dicarbonyl and ozone at low temperatures,” J. Vac. Sci. Technol. A Vacuum, Surfaces, Film., vol. 31, p. 01A145, 2013.

  44. M. Kim, H. An, W. J. Lee, and J. Jung, “Low Damage-Transfer of Graphene Using Epoxy Bonding”, Electronic Materials Letters, Vol. 9, no. 4, pp. 517-521, 2013.

  45. H. Kim, E. Kim, W. J. Lee, J. Jung, “Effects of Hydrogen in the Cooling Step of Chemical Vapor Deposition of Graphene”, Electronic Materials Letters, Vol. 9, no. 4, pp. 417-420, 2013.

  46. S. H. Seo, J. S. Hwang, J. M. Yang, W. J. Hwang, J. Y. Song, and W. J. Lee, “Failure mechanism of copper through-silicon vias under biased thermal stress,” Thin Solid Films, vol. 546, pp. 14–17, 2013.

  47. B. Han, K. H. Choi, K. Park, W. S. Han, and W.-J. Lee, “Low-Temperature Atomic Layer Deposition of Cobalt Oxide Thin Films Using Dicobalt Hexacarbonyl tert-Butylacetylene and Ozone,” Electrochem. Solid-State Lett., vol. 15, no. 2, p. D14, 2012.

  48. B. Han, S. W. Lee, K. Park, C. O. Park, S. K. Rha, and W. J. Lee, “The electrical properties of dielectric stacks of SiO2 and Al2O3 prepared by atomic layer deposition method,” Curr. Appl. Phys., vol. 12, no. 2, pp. 434–436, 2012.

  49. J.-K. Kim, K. Jin, J. Jung, S.-K. Rha, and W.-J. Lee, “Atomic Layer Deposition of SiO2 Thin Films Using Tetrakis(ethylamino)silane and Ozone,” J. Nanosci. Nanotechnol., vol. 12, no. 4, pp. 3589–3592, 2012.

  50. H. J. Lee, E. Kim, W. J. Lee, and J. Jung, “RF transmission properties of graphene monolayers with width variation,” Phys. Status Solidi - Rapid Res. Lett., vol. 6, no. 1, pp. 19–21, 2012.

  51. K. M. Park, J. K. Kim, B. Han, W. J. Lee, J. Kim, and H. K. Shin, “Influence of the deposition temperature on the properties of copper thin films prepared by alternating injection of Cu(ethylketoiminate)2 and H2 on a ruthenium substrate,” Microelectron. Eng., vol. 89, pp. 27–30, 2012.

  52. H. An, W. J. Lee, and J. Jung, “Graphene synthesis on Fe foil using thermal CVD,” Curr. Appl. Phys., vol. 11, no. 4, pp. S81–S85, 2011.

  53. Y.-S. Lee, Y.-H. Lee, H.-J. Ju, W.-J. Lee, H. S. Lee, and S.-K. Rha, “Characteristics of SiO2/Si3N4/SiO2 Stacked-Gate Dielectrics Obtained via Atomic-Layer Deposition,” J. Nanosci. Nanotechnol., vol. 11, no. 7, pp. 5795–5799, 2011.

  54. S. G. Kang, B. Han, H. S. Park, S. K. Kang, S. K. Rha, S. J. Lee, M. Schlott, and W. J. Lee, “The effect of Mg concentration and annealing temperature on the adhesion characteristics of Cu(Mg) films on glass substrates,” Surf. Coatings Technol., vol. 205, 2010.

  55. W.-J. Lee, C.-H. Han, J.-K. Park, Y.-S. Lee, and S.-K. Rha, “Atomic Layer Deposition and Properties of Silicon Oxide Thin Films Using Alternating Exposures to SiH2Cl2 and O3,” Jpn. J. Appl. Phys., vol. 49, p. 071504, 2010.

  56. Y.-S. Lee, W.-J. Lee, S.-K. Kang, and S.-K. Rha, “Study of Si3N4/SiO2/Si and SiO2/Si3N4/Si Multilayers by O and N K-Edge X-ray Absorption Spectroscopy,” Jpn. J. Appl. Phys., vol. 49, p. 08JF05, 2010.

  57. K.-M. Kim, W.-J. Lee, S.-W. Lee, Y. J. Lee, Y.-S. Lee, and S.-K. Rha, “Pulsed Inductively-Coupled Plasma Doping of Phosphorus for N+-P Junction Fabrication,” J. Korean Phys. Soc., vol. 54, no. 5, p. 1844, 2009.

  58. Y.-S. Kim, S.-G. Kang, K.-B. Kim, N. S. Lee, W.-J. Lee, and J. H. Yoo, “Influence of Deposition Temperature and Substrate Orientation on the Microstructure of Pr0.7Ca0.3MnO3 Films Grown on Platinum Substrates by Using Pulsed Laser Deposition,” J. Korean Phys. Soc., vol. 54, no. 1, p. 209, 2009.

  59. J. Park, B. Y. Yoon, C. O. Park, W. J. Lee, and C. B. Lee, “Sensing behavior and mechanism of mixed potential NOx sensors using NiO, NiO(+YSZ) and CuO oxide electrodes,” Sensors Actuators, B Chem., vol. 135, pp. 516–523, 2009.

  60. K. Park, W. D. Yun, B. J. Choi, H. D. Kim, W. J. Lee, S. K. Rha, and C. O. Park, “Growth studies and characterization of silicon nitride thin films deposited by alternating exposures to Si2Cl6 and NH3,” Thin Solid Films, vol. 517, pp. 3975–3978, 2009.

  61. S.-K. Rha, T. P. Chou, G. Cao, Y.-S. Lee, and W.-J. Lee, “Characteristics of silicon oxide thin films prepared by sol electrophoretic deposition method using tetraethylorthosilicate as the precursor,” Curr. Appl. Phys., vol. 9, no. 2, pp. 551–555, 2009.

  62. Y. Im, J. H. Lee, Y.-S. Lee, W.-J. Lee, and S.-K. Rha, “Characteristics of Silicon Dioxide Film Deposited by Neutral Beam-Assisted Chemical Vapor Deposition,” Jpn. J. Appl. Phys., vol. 47, no. 12, pp. 8905–8908, 2008.

  63. S.-W. Lee, K. Park, B. Han, S.-H. Son, S.-K. Rha, C.-O. Park, and W.-J. Lee, “Atomic Layer Deposition of Silicon Oxide Thin Films by Alternating Exposures to Si2Cl6 and O3,” Electrochem. Solid-State Lett., vol. 11, p. G23, 2008.

  64. Y. Lee, W. Lee, M. H. Lee, and S. Rha, “Study of Implanted B + and P + Ions into Si ( 100 ) for Ultra Shallow Junction by SIMS,” J. Surf. Anal., vol. 14, no. 4, pp. 420–423, 2008.

  65. S.-K. Rha, Y.-S. Lee, W.-J. Lee, M.-S. Jeon, J.-K. Song, and M. H. Lee, “Behavior of Boron Implanted into n-Si (100) by Low-Energy (<2 keV) Ion Implantation for a Shallow Junction,” J. Korean Phys. Soc., vol. 52, no. 4, pp. 1237–1240, 2008.

  66. H.-L. Kim, Y.-S. Kim, S.-G. Kang, W.-J. Lee, U.-H. Kwon, and J. Han, “Dissolution Behaviors of Calcium Phosphate Films Prepared by Pulsed Laser Deposition Method in Ca-free Hanks Balanced Salt Solution,” Biomater. Res., vol. 11, no. 2, pp. 87–90, 2007.

  67. U. H. Kwon, M. H. Kam, M. Bachle, D. J. Kim, W. J. Lee, H. L. Kim, and J. S. Han, “Effects of Thin Hydroxyapatite Coating on Initial Response of Osteoblast-Like Cells,” Key Eng. Mater., vol. 342–343, pp. 673–676, 2007.

  68. W. Lee, M. Chun, K. Cheong, K. Park, C. O. Park, G. Cao, and S. Rha, “Characteristics of SiO 2 Film Grown by Atomic Layer Deposition as the Gate Insulator of Low-Temperature Polysilicon Thin-Film Transistors,” Solid State Phenom., vol. 126, pp. 247–250, 2007.

  69. S. H. Park, I. Y. Ryu, D. J. Kim, W. J. Lee, J. S. Han, and M. H. Lee, “Influence of Hydrothermal Processing Parameters on Phase Stability of Hydroxyapatite,” Key Eng. Mater., vol. 342–343, pp. 877–880, 2007.

  70. S. H. Park, I. Y. Ryu, W. J. Lee, D. J. Kim, J. S. Han, and M. H. Lee, “Sinterbility and Mechanical Properties of Zirconia Nanoparticles Prepared by Hydrothermal Process,” Solid State Phenom., vol. 124–126, pp. 1293–1296, 2007.

  71. W.-J. Lee, Y.-S. Lee,  K.-S. Cheong, S.-K. Rha, K.-M. Kim, W.-J. Lee, “Remaining Oxide and Low-Energy Ion Implantation of BF2+ for Si (100),” J. Korean Phys. Soc., vol. 50, no. 3, p. 657, 2007.

  72. M. H. Kam, J. S. Han, J. H. Yang, J. B. Lee, D. J. Kim, and W.J. Lee, “Histomorphometric Analysis of Zirconia/Alumina Composite and CP Titanium Treaded Implants in Rabbit Tibia,” Key Eng. Mater., vol. 309–311, pp. 437–440, 2006.

  73. H. Kim, S. Lee, Y. Kim, D. Kim, W. Lee, and J. Han, “Influence of substrate temperature on the growth rate and the composition of calcium phosphate films prepared by using pulsed laser deposition,” J. Korean Phys. Soc., vol. 49, no. 6, pp. 2418–2422, 2006.

  74. H. Kim, Y. Kim, D. Kim, and W. Lee, “Influences of Ambient Gases on the Structure and the Composition of Calcium Phosphate Films Prepared by Pulsed Laser Deposition,” J. Korean Phys. Soc., vol. 49, no. 5, pp. 2019–2022, 2006.

  75. W. J. Lee, U. J. Kim, C. H. Han, M. H. Chun, S. K. Rha, and Y. S. Lee, “Characteristics of silicon nitride thin films prepared by using alternating exposures of SiH2Cl2 and NH3,” J. Korean Phys. Soc., vol. 47, no. November, pp. S598–S602, 2005.

  76. W. Lee, S. Lee, H. Kim, D. Kim, and J. Han, “Characteristics of calcium phosphate films prepared by pulsed laser deposition under various water vapor pressures,” J. Korean Phys. Soc., vol. 47, no. 1, pp. 152–156, 2005.

  77. W. J. Lee, Y. S. Lee, S. K. Rha, K. Y. Lim, H. S. Lee, and C. N. Whang, “Polyimide Surface Modification by Low Energy Ion Beam Irradiation,” Mater. Sci. Forum, vol. 492–493, pp. 659–664, 2005.

  78. J.-H. Lee, U.-J. Kim, C.-H. Han, S.-K. Rha, W.-J. Lee, and C.-O. Park, “Investigation of Silicon Oxide Thin Films Prepared by Atomic Layer Deposition Using SiH2Cl2 and O3 as the precursors,” Jpn. J. Appl. Phys., vol. 43, no. 3, pp. L328–L330, 2004.

  79. W. J. Lee, S. J. Kim, W. Lee, Y. J. Lee, Y. S. Lee, S. K. Rha, and C. O. Park, “Texture and sheet resistance of Al alloy thin films on Ti and TiN thin films,” J. Mater. Sci. Mater. Electron., vol. 15, pp. 9–13, 2004.

  80. W. Lee, J. Lee, C. O. Park, and Y. Lee, “A Comparative Study on the Si Precursors for the Atomic Layer Deposition of Silicon Nitride Thin Films,” Korean J. Mater. Res., vol. 45, no. 5, pp. 1352–1355, 2004.

  81. W.-J. Lee and S.-K. Rha, “Chemical vapor deposition–physical vapor deposition aluminum plug process for dynamic random-access memory applications,” J. Vac. Sci. Technol. B Microelectron. Nanom. Struct., vol. 22, p. 1931, 2004.

  82. W. J. Lee and S. K. Rha, “Effect of underlayer on the via filling and the microstructure of the aluminum film in aluminum plug process,” Japanese J. Appl. Physics, Part 1 Regul. Pap. Short Notes Rev. Pap., vol. 42, no. 6, pp. 3372–3376, 2003.

  83. Y. Lee, H. M. Lim, S.-J. Kim, W.-J. Lee, and D.-H. Cho, “Estimation of phase ratio for nano-sized TiO<SUB>2</SUB> powders by Ti K-edge XANES,” Res. Chem. Intermed., vol. 29, no. 7, pp. 783–791, 2003.

  84. W. J. Lee, Y. S. Lee, S. K. Rha, Y. J. Lee, K. Y. Lim, Y. D. Chung, and C. N. Whang, “Adhesion and interface chemical reactions of Cu/polyimide and Cu/TiN by XPS,” Appl. Surf. Sci., vol. 205, pp. 128–136, 2003.

  85. J. J. Kim, J. Y. Kim, C. H. Jeong, N. H. Park, S. B. Han, J. W. Park, and W.-J. Lee, “Corrosion in Aluminum Chemical Mechanical Planarization for Sub-Quarter-Micron Dynamic Random Access Memory Devices,” Jpn. J. Appl. Phys., vol. 41, no. 2, pp. 925–929, 2002.

  86. Joo Wan Lee, Byoung Youp Kim, Sang Yeop Han, W. J. Lee, Jun Ki Kim, J. W. Park, Jae Sung Roh, and Y. C. Kim, “Study of bump formation in integrated chemical vapor deposition-physical vapor deposition aluminum filling process,” Japanese J. Appl. Physics, Part 1 Regul. Pap. Short Notes Rev. Pap., vol. 40, no. 3, pp. 1172–1177, 2001.

  87. S.-J. Kim, W. Lee, W.-J. Lee, S. D. Park, J. S. Song, and E. G. Lee, “Preparation of nanocrystalline nickel oxide–yttria-stabilized zirconia composite powder by solution combustion with ignition of glycine fuel,” J. Mater. Res., vol. 16, pp. 3621–3627, 2001.

  88. W. H. Lee, S. J. Kim, W. J. Lee, J. G. Lee, R. C. Haddon, and P. J. Reucroft, “X-ray photoelectron spectroscopic studies of surface modified single-walled carbon nanotube material,” Appl. Surf. Sci., vol. 181, pp. 121–127, 2001.

  89. W. H. Lee, S. J. Kim, W. J. Lee, C. S. Byun, D. K. Kim, J. Y. Kim, C. Y. Hyun, J. G. Lee, and J. W. Park, “Mechanism of surface modification of a porous-coated Ti-6Al-4V implant fabricated by electrical resistance sintering,” J. Mater. Sci., vol. 36, pp. 3573–3577, 2001.

  90. W.-J. L. W.-J. Lee, J. J. K. J. J. Kim, S. J. L. S. J. Lee, J. W. P. J. W. Park, and H. L. P. H. L. Park, “CVD-PVD aluminum process for DRAM applications,” Proc. IEEE 2001 Int. Interconnect Technol. Conf. (Cat. No.01EX461), vol. 00, no. 7, pp. 4–6, 2001.

  91. B.-S. Suh, H.-K. Cho, Y.-J. Lee, W.-J. Lee, and C.-O. Park, “Crystallization of amorphous WN[sub x] films,” J. Appl. Phys., vol. 89, no. 7, p. 4128, 2001.

  92. W. J. Lee, J. Hong, and S. K. Rha, “Thermally stable tungsten bit-line process flow for the capacitor over bit-line-type dynamic random-access memory,” Japanese J. Appl. Physics, Part 1 Regul. Pap. Short Notes Rev. Pap., vol. 39, no. 6, pp. 3344–3348, 2000.

  93. W.-J. Lee, B. Y. Kim, S. Y. Han, J. W. Lee, J. K. Kim, and P. J. Won, “Integration of Chemical Vapor Deposition Aluminum and Physical Vapor Deposition Aluminum for Aluminum Plug Process of Sub-Quarter Micron Devices,” Jpn. J. Appl. Phys., vol. 39, no. 4, pp. 1694–1700, 2000.

  94. S.-K. Rha, S.-Y. Lee, W.-J. Lee, Y.-S. Hwang, C.-O. Park, D.-W. Kim, Y.-S. Lee, and C.-N. Whang, “Characterization of TiN barriers against Cu diffusion by capacitance–voltage measurement,” J Vac Sci Technol  B, vol. 16, no. 4, p. 2019, 1998.

  95. S.-K. Rha, W.-J. Lee, S.-Y. Lee, Y.-S. Hwang, Y.-J. Lee, D.-I. Kim, D.-W. Kim, S.-S. Chun, and C.-O. Park, “Improved TiN film as a diffusion barrier between copper and silicon,” Thin Solid Films, vol. 320, no. 1, pp. 134–140, 1998.

  96. W.-J. Lee, S.-K. Rha, S.-Y. Lee, D.-W. Kim, and C.-O. Park, “Effect of the pressure on the chemical vapor deposition of copper from copper hexafluoroacetylacetonate trimethylvinylsilane,” Thin Solid Films, vol. 305, pp. 254–258, 1997.

  97. S.-K. Rha, W.-J. Lee, S.-Y. Lee, D.-W. Kim, and C.-O. Park, “Grain growth of copper films prepared by chemical vapour deposition,” J. Mater. Sci. Electron., vol. 8, pp. 217–221, 1997.

  98. W.-J. Lee, S.-K. Rha, S.-Y. Lee, and C.-O. Park, “Field-aided thermal chemical vapor deposition of copper using Cu(I) organometallic precursor,” J. Electrochem. Soc., vol. 144, no. 2, pp. 683–686, 1997.

  99. S. Rha, W. Lee, S. Lee, D. Kim, C.-O. Park, and S.-S. Chun, “Interdiffusions and reactions in Cu/TiN/Ti/Si and Cu/TiN/Ti/SiO2/Si multilayer structures,” J. Mater. Res., vol. 12, no. 12, pp. 3367–3372, 1997.

  100. D. W. Kim, K. J. Kim, D. I. Kim, W. J. Lee, S. Y. Lee, Y. J. Lee, S. K. Rha, and C. O. Park, “Effects of the integrity of silicon thin films on the electrical characteristics of thin dielectric ONO film,” J. Mater. Sci. Electron., vol. 8, pp. 91–94, 1997.

  101. S.-Y. Lee, S.-K. Rha, W.-J. Lee, D.-W. Kim, J.-S. Hwang, and C.-O. Park, “Effects of the partial pressure of copper (I) hexafluoroacetylacetonate trimethylvinylsilane on the chemical vapor deposition of copper,” Japanese J. Appl. Physics, Part 1 Regul. Pap. Short Notes Rev. Pap., vol. 36, no. 8, pp. 5249–5252, 1997.

  102. W.-J. Lee, J.-S. Min, S.-K. Rha, S.-S. Chun, C.-O. Park, and D.-W. Kim, “Copper chemical vapour deposition using copper(I) hexafluoroacetylacetonate trimethylvinylsilane,” J. Mater. Sci. Mater. Electron., vol. 7, no. 2, pp. 111–117, 1996.

  103. S.-K. Rha, W.-J. Lee, S.-Y. Lee, D.-W. Kim, C.-O. Park, and S.-S. Chun, “Effects of the annealing in Ar and H2/Ar ambients on the microstructure and the electrical resistivity of the copper film prepared by chemical vapor deposition,” Japanese J. Appl. Physics, Part 1 Regul. Pap. Short Notes Rev. Pap., vol. 35, no. 11, 1996.

Patents

 

International patents

 

  1. GeSbTe 막을 형성하는 방법, 2023-01 (출원)

  2. Chuck Pin, Method for Manufacturing a Chuck Pin, Apparatus for Treating a Substrate, 2019-08 (출원)

  3. 척핀, 척핀 제조 방법 및 기판 처리 장치, 2016-11 (출원)

  4. 척핀, 척핀 제조 방법 및 기판 처리 장치, 2016-11 (출원)

  5. Won Jun Lee, "Metal Thin Film of Semiconductor Device and Method for Forming Same,” U. S. Pat. No. 6,780,752 (등록일: 2004년 8월 24일)

  6. Won Jun Lee, "Method for Forming an Interconnection in a Semiconductor Device ", U. S. Pat. No. 6,242,340 (등록일: 2001년 6월 5일)

  7. "用於半導體裝置之互連層的製造方法", 중화민국특허 제124,052호 (등록일: 2001년 4월 23일)

  8. "半導體素子のCu薄膜形成方法", 일본 특허 제 2,932,255호 (등록일 1999. 5. 28.)

  9. "半導體素子の銅薄配線形成方法", 일본 특허 제 2,952,591호 (등록일: 1999. 7. 16.)

  10. "Method of Forming a Thin Film of Copper", U. S. Patent No. 5,817,367 (등록일 1998. 10. 6.)

  11. "2層構造の銅擴散防止膜の形成方法", 일본 특허 제 2,782,600호 (등록일: 1998. 5. 22)

 

 

 

Domestic Patents​

  1. ALD 공정에서 금속 전구체 환원용 환원제 조성물 및 금속 박막의 형성 방법, 2023-10 (등록)

  2. 도즈량에 따른 선택적 원자층 식각 방법, 2023-08 (출원)

  3. 자기조립단분자막을 이용한 원자층 식각 방법, 2023-02 (출원)

  4. 텅스텐 전구체, 이를 이용한 텅스텐 박막 증착 방법 및 장치, 2022-12 (출원)

  5. 전구체 공급에 적합한 구조를 갖는 사이클론 기화기, 2022-10 (출원)

  6. 멀티 히팅 영역을 구비한 사이클론 기화기, 2022-10 (출원)

  7. ALD 공정에서 금속 전구체 환원용 환원제 조성물 및 금속 박막의 형성 방법, 2022-09 (출원)

  8. GeSbTe 막을 형성하는 방법, 2022-01 (출원)

  9. 평탄화 장치 및 이를 포함하는 기판 처리 장치, 기판 처리 방법, 2021-06 (등록)

  10. 원자층 증착법을 이용한 Ti-Te 막 증착 방법, 및 Ti-Te 분리막을 포함하는 다층 상변화 구조체 및 상변화 메모리 소자, 2021-05 (등록)

  11. 텅스텐 전구체, 이를 이용한 텅스텐 박막 증착 방법 및 증착 장치, 2020-11 (출원)

  12. ALD 공정에서 금속 전구체 환원용 환원제 조성물 및 금속 박막의 형성 방법, 2020-02 (출원)

  13. 평탄화 장치 및 이를 포함하는 기판 처리 장치, 기판 처리 방법, 2019-11 (출원)

  14. 실리콘 질화막의 증착 방법 및 상기 실리콘 질화막의 증착 장치, 2019-04 (등록)

  15. 원자층 증착을 이용한 칼코겐-함유 막의 제조 방법, 2019-02 (등록)

  16. 실리콘 질화막의 증착 방법 및 상기 실리콘 질화막의 증착 장치, 2019-02 (출원)

  17. ALD 공정에서 금속 전구체 환원용 환원제 조성물 및금속 박막의 형성 방법, 2019-02 (출원)

  18. 다층 상변화 물질막 및 이의 제조 방법,이를 포함하는 상변화 메모리 소자, 2018-12 (등록)

  19. 칼코겐-함유 막 및 이의 제조 방법, 2018-04 (등록)

  20. 원자층 증착법을 이용한 Ti-Te 막 증착 방법, 및 Ti-Te 분리막을 포함하는 다층 상변화 구조체 및 상변화 메모리 소자, 2018-02 (출원)

  21. 실리콘 질화막의 증착 방법 및 상기 실리콘 질화막의 증착 장치, 2017-05 (출원)

  22. 다층 상변화 물질막 및 이의 제조 방법,이를 포함하는 상변화 메모리 소자, 2017-05 (출원)

  23. 반도체 다이의 형상 변화를 이용하여 응력을 감소시킨 유연전자소자 및 그 제조방법, 2017-05 (출원)

  24. 코발트-함유 박막의 제조 방법, 2016-06 (출원)

  25. 중립축 위치가 조절된 유연전자소자 및 그 제조방법, 2016-05 (출원)

  26. 실리콘 질화막의 증착 방법 및 상기 실리콘 질화막의 증착 장치, 2016-04 (출원)

  27. 원자층 증착을 이용한 칼코겐-함유 막의 제조 방법, 2016-04 (출원)

  28. 척핀, 척핀 제조 방법 및 기판 처리 장치, 2016-01 (등록)

  29. 척핀, 척핀 제조 방법 및 기판 처리 장치, 2016-01 (출원)

  30. 실리콘 관통전극 구조체 및 이의 열-기계적 응력 예측 방법, 2015-12 (등록)

  31. 척핀, 척핀 제조 방법 및 기판 처리 장치, 2015-11 (출원)

  32. 불소코팅물품, 불소코팅물품 제조 방법 및 기판 처리 장치, 2015-11 (출원)

  33. 칼코겐-함유 막 및 이의 제조 방법, 2015-11 (출원)

  34. 산화금속 박막의 제조 방법 및 상기 박막을 이용하는 리튬이차전지, 2015-01 (출원)

  35. 실리콘 관통전극 구조체 및 이의 열-기계적 응력 예측 방법, 2014-10 (출원)

  36. 칼코겐-함유 막 및 이의 제조 방법, 2014-06 (출원)

  37. 서로 다른 젖음성을 갖는 영역들을 구비하는 캐리어 기판, 이를 사용한 소자 기판 처리 방법, 2014-04 (등록)

  38. 박막 전지용 리튬-함유 박막 형성용 타겟 및 이의 제조 방법, 2014-04 (등록)

  39. 전기도금용 구리 금속 박막 및 그의 제조 방법, 및 이를 이용한 반도체 소자의 구리 배선 형성 방법, 2013-12 (출원)

  40. 박막 증착 장치 및 방법, 2013-12 (등록)

  41. 구리 이온 드리프트의 측정을 위한 구조체 및 이를 이용한 구리 이온 드리프트의 측정 방법, 2013-01 (등록)

  42. 서로 다른 젖음성을 갖는 영역들을 구비하는 캐리어 기판, 이를 사용한 소자 기판 처리 방법, 2012-08 (출원)

  43. 박막 증착 장치 및 방법, 2012-05 (출원)

  44. 금속-공기 전지,그의제조방법,및 상기 금속-공기 전지를 포함하는 전지 모듈, 2011-08 (출원)

  45. 박막 측정 방법 및 박막 측정 장치, 2011-05 (등록)

  46. 구리 이온 드리프트의 측정을 위한 구조체 및 이를 이용한 구리 이온 드리프트의 측정 방법, 2011-03 (출원)

  47. 그래핀 배선 형성 방법, 2011-03 (출원)

  48. 박막 전지용 리튬-함유 박막 형성용 타겟 및 이의 제조 방법, 2011-02 (출원)

  49. 원자층 증착법에 의한 금속 박막 증착 방법, 2011-02 (등록)

  50. 박막 측정 방법 및 박막 측정 장치, 2008-10 (출원)

  51. 원자층 증착법에 의한 금속 박막 증착 방법, 2008-08 (출원)

  52. 다층 절연박막, 2007-09 (등록)

  53. 다층 절연박막의 구조, 2006-08 (출원)

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