Won-Jun Lee's Group
Semiconductor Materials Lab
Sejong University, Seoul, Korea
Metal Nitride materials by ALD
#Copper Nitride
In our study, the preparation of copper films by reduction of copper nitride film method was conducted by ALD-copper nitride film using Cu(dmamb)2 and ammonia. The growth of copper nitride film was monitored in situ during ALD using a quartz crystal microbalance (QCM) system.
The ALD copper nitride film shows smooth surface and excellent step coverage of >98% as shown in figure below.
-
J. Park, K. Jin, B. Han, M. J. Kim, J. Jung, J. J. Kim, and W. Lee, “Atomic layer deposition of copper nitride film and its application to copper seed layer for electrodeposition,” Thin Solid Films, vol. 556, pp. 434–439, 2014.
Cross-sectional TEM images of ALD copper nitride films on trench patterns (aspect ratio ~7). Won-Jun Lee Sejong University 이원준 세종 대학교
SEM photographs of the surfaces of the ALD copper nitride films deposited at (a) 100°C, (b) 120°C, (c) 140°C and (d) 160°C. Won-Jun Lee Sejong University 이원준 세종 대학교