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Metal oxide materials by ALD

#TiO2​

  • [TDMAT] H.-L. Kim, R. Hidayat, K. Khumaini, W.-J. Lee, A theoretical study on the surface reaction of tetrakis(dimethylamino)titanium on titanium oxide, PCCP 25 (2023) 22250-22257. DOI: 10.1039/D3CP02009F

  • [CMENT] S. Kim, R. Hidayat, H. Roh, J. Kim, H.-L. Kim, K. Khumaini, M. Park, J.-H. Seok, J. W. Park, W.-J. Lee, Atomic layer deposition of titanium oxide thin films using a titanium precursor with a linked amido-cyclopentadienyl ligand, J. Mater. Chem. C, 10, (2022) 6696-6709.

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#Cobalt oxides​

Cobalt oxide thin films have been investigated extensively because of their applications in various technology fields, such as electrochromic devices, heterogenous catalysts, solid state gas sensors, RERAM devices, and intercalation compounds for energy storage.

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ALD of cobalt oxide films was studied using different organometallic cobalt compounds, such as dicobalt hexacarbonyl tert-butylacetylene [C12H10O6(Co)2, CCTBA] and cyclopentadienylcobalt dicarbonyl [(C5H5)Co(CO)2, CpCo(CO)2].

 

Film growth and reaction of the cobalt precursor during ALD studied using in situ quartz crystal microbalance (QCM).

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  • B. Han, J.-M. Park, K. H. Choi, W.-K. Lim, T. R. Mayangsari, W. Koh, and W.-J. Lee, “Atomic layer deposition of stoichiometric Co3O4 films using bis(1,4-di-iso-propyl-1,4-diazabutadiene) cobalt,” Thin Solid Films, vol. 589, pp. 718–722, 2015.

  • B. Han, K. Ha Choi, J. Min Park, J. Woo Park, J. Jung, and W.-J. Lee, “Atomic layer deposition of cobalt oxide thin films using cyclopentadienylcobalt dicarbonyl and ozone at low temperatures,” J. Vac. Sci. Technol. A Vacuum, Surfaces, Film., vol. 31, p. 01A145, 2013.

  • B. Han, K. H. Choi, K. Park, W. S. Han, and W.-J. Lee, “Low-Temperature Atomic Layer Deposition of Cobalt Oxide Thin Films Using Dicobalt Hexacarbonyl tert-Butylacetylene and Ozone,” Electrochem. Solid-State Lett., vol. 15, no. 2, p. D14, 2012.

cobalt oxide 2.png

cobalt oxide 2.png

Mass change during an ALD cycle consisted of a CpCo(CO)2 pulse, a purge, a O3/O2 pulse, and a purge. The m1 is the mass change during a cobalt precursor pulse and the m0 is the mass increment after a complete ALD cycle. Exposure of CpCo(CO)2 and O3/O2 were 2106 and 5108 L, respectively. Won-Jun Lee Sejong University 이원준 세종 대학교

cobalt oxide.png

cobalt oxide.png

Cross-sectional TEM images of ALD cobalt oxide films on trench-patterned wafers deposited at (a) 50 C, (b) 100 C, and (c) 150 C. Exposures of CpCo(CO)2 and O3/O2 were 2106 and 5108 L, respectively. The thickness of all cobalt oxide films was 3 nm. Won-Jun Lee Sejong University 이원준 세종 대학교

​#Nb2O5​

  • [TBTDMNb] K. Khumaini, H. Roh, H. Han, H.-L. Kim, H.-S. Kim, J.-H. Seok, J. W. Park, W.-J. Lee, Surface reaction mechanism of atomic layer deposition of niobium oxide: In situ characterization and first-principle study, Appl. Surf. sci. 615 (2023) 156340. https://doi.org/10.1016/j.apsusc.2023.156340

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