Won-Jun Lee's Group
Semiconductor Materials Lab
Sejong University, Seoul, Korea
Phase Change Material (PCM)
The phase change random-access memory (PCRAM) device is the next-generation non-volatile memory device in the spotlight, especially for storage class memory applications. Among phase change materials, Ge-Sb-Te (GST) compounds have been widely studied because of their rapid switching between amosphous and crystalline phase.
As scaling down to sub-20 nm technology, one of the most important requirements for GST film is the gapfilling into the nanostructure to form confined structures. Atomic layer deposition (ALD) is an ideal solution to fulfil this requirement. ALD GST films were deposited by supercycles of ALD Ge-Te and ALD Sb-Te.
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B. Han, Y.-J. Kim, J.-M. Park, L. L. Yusup, H. Ishii, C. Lansalot-Matras, and W.-J. Lee, “Reaction Mechanism Underlying Atomic Layer Deposition of Antimony Telluride Thin Films,” J. Nanosci. Nanotechnol., vol. 16, no. 5, pp. 4924–4928, 2016.
Power consumption and thermal disturbance in Planar structure and confined structure
Gapfilling of GST into nanostructure in the sub-20 nm PCRAM manufacturing