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Won-Jun Lee's Group
Semiconductor Materials Lab
Sejong University, Seoul, Korea
Research Overview
ALD is based on two half-reactions that occur on the substrate surface when alternately exposed to different precursors.
These reactions are self-saturated, ensuring the excellent conformality of the film growth on high aspect ratio structures.
The ALD process requires precursor(s) and co-reactant with excellent reactivity, thermal stability, and volatility.
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