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Research Overview

 

ALD is based on two half-reactions that occur on the substrate surface when alternately exposed to different precursors.

 

These reactions are self-saturated, ensuring the excellent conformality of the film growth on high aspect ratio structures.

 

The ALD process requires precursor(s) and co-reactant with excellent reactivity, thermal stability, and volatility.

Precursor #1.png

Precursor #1.png

ALD process, Won-Jun Lee Sejong University 이원준 세종 대학교

purge 1.png

purge 1.png

ALD process, Won-Jun Lee Sejong University 이원준 세종 대학교

Precursor #2.png

Precursor #2.png

ALD process, Won-Jun Lee Sejong University 이원준 세종 대학교

purge 2.png

purge 2.png

ALD process, Won-Jun Lee Sejong University 이원준 세종 대학교

monolayers.png

monolayers.png

ALD process, Won-Jun Lee Sejong University 이원준 세종 대학교

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